The gate to body capacitance of a MOSFET by asymptotic analysis

Pages: 527 - 541, Volume 7, Issue 3, May 2007

doi:10.3934/dcdsb.2007.7.527       Abstract        Full Text (412.7K)       Related Articles

Ellis Cumberbatch - School of Mathematical Sciences, Claremont Graduate University, 710 N. College Avenue, Claremont, CA 91711, United States (email)
Hedley Morris - Department of Mathematics, San Jose State University, One Washington Square, San Jose, CA 95192, United States (email)

Abstract: Capacitance/Voltage characteristics of the MOSFET gate region at small oxide thickness show substantial variation from the oxide capacitance. We provide a numerical and analytic approach to the standard drift-diffusion equations and show how this can be used to determine analytic formulae that can be used in simulation programs such as SPICE.

Keywords:  Gate capacitance, asymptotics, mathematical blending.
Mathematics Subject Classification:  Primary: 58F15, 58F17; Secondary: 53C35.

Received: September 2006;      Revised: December 2006;      Published: February 2007.