The gate to body capacitance of a MOSFET by asymptotic analysis
Ellis Cumberbatch - School of Mathematical Sciences, Claremont Graduate University, 710 N. College Avenue, Claremont, CA 91711, United States (email)
Abstract: Capacitance/Voltage characteristics of the MOSFET gate region at small oxide thickness show substantial variation from the oxide capacitance. We provide a numerical and analytic approach to the standard drift-diffusion equations and show how this can be used to determine analytic formulae that can be used in simulation programs such as SPICE.
Keywords: Gate capacitance, asymptotics, mathematical blending.
Received: September 2006; Revised: December 2006; Published: February 2007.
2011 Impact Factor.921