The relaxation to the drift-diffusion system for the 3-$D$ isentropic Euler-Poisson model for semiconductors

Corrado Lattanzio; Pierangelo Marcati

doi:10.3934/dcds.1999.5.449

Article Contents

1999, Volume 5, Issue 2: 449-455. Doi: 10.3934/dcds.1999.5.449

This issue Previous Article Statistical properties of piecewise smooth hyperbolic systems in high dimensions Next Article Errata to "Stably ergodic skew products"

The relaxation to the drift-diffusion system for the 3-$D$ isentropic Euler-Poisson model for semiconductors

Corrado Lattanzio^1, and
Pierangelo Marcati^1,

1.
Dipartimento di Matematica Pura ed Applicata, Università degli Studi di L'Aquila, Via Vetoio, loc. Coppito - 67010 L'Aquila

Revised: September 1998

Published online: January 1999

Abstract / Introduction Related Papers Cited by

Abstract

In this paper we are concerned with the study of the relaxation limit of the 3-$D$ hydrodynamic model for semiconductors. We prove the convergence of the weak solutions to the Euler-Poisson system toward the solutions to the drift-diffusion system, as the relaxation time tends to zero.

Keywords:

Mathematics Subject Classification: 35L65, 35L70.

Citation:

Article Metrics

HTML views() PDF downloads(161) Cited by(0)

The relaxation to the drift-diffusion system for the 3-$D$ isentropic Euler-Poisson model for semiconductors

Abstract

Access History

Article Metrics

Access History

Other Articles By Authors

Catalog

The relaxation to the drift-diffusion system for the 3-$D$ isentropic Euler-Poisson model for semiconductors

Abstract

Access History

SHARE

Article Metrics

Access History

Other Articles By Authors

Catalog

Export File

Citation

Format

Content