The relaxation to the drift-diffusion system for the 3-D isentropic Euler-Poisson model for semiconductors

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April 1999, 5(2): 449-455. doi: 10.3934/dcds.1999.5.449

The relaxation to the drift-diffusion system for the 3-$D$ isentropic Euler-Poisson model for semiconductors

Corrado Lattanzio ^1, and Pierangelo Marcati ^1,

1.	Dipartimento di Matematica Pura ed Applicata, Università degli Studi di L'Aquila, Via Vetoio, loc. Coppito - 67010 L'Aquila, Italy, Italy

Revised September 1998 Published January 1999

Abstract
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In this paper we are concerned with the study of the relaxation limit of the 3-$D$ hydrodynamic model for semiconductors. We prove the convergence of the weak solutions to the Euler-Poisson system toward the solutions to the drift-diffusion system, as the relaxation time tends to zero.

Keywords: relaxation limit, Euler-Poisson system, drift-diffusion..

Mathematics Subject Classification: 35L65, 35L7.

Citation: Corrado Lattanzio, Pierangelo Marcati. The relaxation to the drift-diffusion system for the 3-$D$ isentropic Euler-Poisson model for semiconductors. Discrete & Continuous Dynamical Systems - A, 1999, 5 (2) : 449-455. doi: 10.3934/dcds.1999.5.449

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