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The gate to body capacitance of a MOSFET by asymptotic analysis

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  • Capacitance/Voltage characteristics of the MOSFET gate region at small oxide thickness show substantial variation from the oxide capacitance. We provide a numerical and analytic approach to the standard drift-diffusion equations and show how this can be used to determine analytic formulae that can be used in simulation programs such as SPICE.
    Mathematics Subject Classification: Primary: 58F15, 58F17; Secondary: 53C35.


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