American Institute of Mathematical Sciences

Advanced
May  2007, 7(3): 527-541. doi: 10.3934/dcdsb.2007.7.527

The gate to body capacitance of a MOSFET by asymptotic analysis

Ellis Cumberbatch 1, and  Hedley Morris 2,

1. 

School of Mathematical Sciences, Claremont Graduate University, 710 N. College Avenue, Claremont, CA 91711, United States
2. 

Department of Mathematics, San Jose State University, One Washington Square, San Jose, CA 95192, United States

Received  September 2006 Revised  December 2006 Published  February 2007

Capacitance/Voltage characteristics of the MOSFET gate region at small oxide thickness show substantial variation from the oxide capacitance. We provide a numerical and analytic approach to the standard drift-diffusion equations and show how this can be used to determine analytic formulae that can be used in simulation programs such as SPICE.
Keywords: asymptotics, mathematical blending., Gate capacitance.
Mathematics Subject Classification: Primary: 58F15, 58F17; Secondary: 53C3.
Citation: Ellis Cumberbatch, Hedley Morris. The gate to body capacitance of a MOSFET by asymptotic analysis. Discrete and Continuous Dynamical Systems - B, 2007, 7 (3) : 527-541. doi: 10.3934/dcdsb.2007.7.527
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