The gate to body capacitance of a MOSFET by asymptotic analysis

Ellis Cumberbatch; Hedley Morris

doi:10.3934/dcdsb.2007.7.527

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2007, Volume 7, Issue 3: 527-541. Doi: 10.3934/dcdsb.2007.7.527

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The gate to body capacitance of a MOSFET by asymptotic analysis

Ellis Cumberbatch^1, and
Hedley Morris^2,

1.
School of Mathematical Sciences, Claremont Graduate University, 710 N. College Avenue, Claremont, CA 91711
2.
Department of Mathematics, San Jose State University, One Washington Square, San Jose, CA 95192

Received: August 31, 2006

Revised: November 30, 2006

Published: April 2007

Abstract Related Papers Cited by

Abstract

Capacitance/Voltage characteristics of the MOSFET gate region at small oxide thickness show substantial variation from the oxide capacitance. We provide a numerical and analytic approach to the standard drift-diffusion equations and show how this can be used to determine analytic formulae that can be used in simulation programs such as SPICE.

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Mathematics Subject Classification: Primary: 58F15, 58F17; Secondary: 53C35.

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