March  2009, 2(1): 81-107. doi: 10.3934/krm.2009.2.81

1D numerical simulation of the mep mathematical model in ballistic diode problem

1. 

Institute of Mathematics, Novosibirsk, 630090, Russian Federation

2. 

Novosibirsk State University, Novosibirsk, 630090, Russian Federation

Received  April 2008 Revised  November 2008 Published  January 2009

Numerical algorithms for finding approximate solutions of the macroscopic balance equations of charge transport in semiconductors based on the maximum entropy principle [A.M. Anile, V. Romano, Non parabolic band transport in semiconductors: closure of the moment equations, Contin. Mech. Thermodyn. 11 (1999), 307--325; V. Romano, Non parabolic band transport in semiconductors: closure of the production terms in the moment equations, Contin. Mech. Thermodyn. 12(2000), 31--51] are constructed and discussed for a typical 1D problem.
Citation: Alexander Blokhin, Alesya Ibragimova. 1D numerical simulation of the mep mathematical model in ballistic diode problem. Kinetic & Related Models, 2009, 2 (1) : 81-107. doi: 10.3934/krm.2009.2.81
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