# American Institute of Mathematical Sciences

December  2011, 4(4): 1121-1142. doi: 10.3934/krm.2011.4.1121

## Analysis of a diffusive effective mass model for nanowires

 1 Istituto di Matematica Applicata e Tecnologie Informatiche CNR, via Ferrata 1, 27100 Pavia 2 UPMC Univ Paris 06, UMR 7598, Laboratoire Jacques-Louis Lions, CNRS, UMR 7598, Laboratoire Jacques-Louis Lions, INRIA Paris-Rocquencourt, EPI MAMBA, F-75005, Paris, France

Received  May 2011 Revised  August 2011 Published  November 2011

We propose in this paper to derive and analyze a self-consistent model describing the diffusive transport in a nanowire. From a physical point of view, it describes the electron transport in an ultra-scaled confined structure, taking into account the interactions of charged particles with phonons. The transport direction is assumed to be large compared to the wire section and is described by a drift-diffusion equation including effective quantities computed from a Bloch problem in the crystal lattice. The electrostatic potential solves a Poisson equation where the particle density couples on each energy band a two dimensional confinement density with the monodimensional transport density given by the Boltzmann statistics. On the one hand, we study the derivation of this Nanowire Drift-Diffusion Poisson model from a kinetic level description. On the other hand, we present an existence result for this model in a bounded domain.
Citation: Clément Jourdana, Nicolas Vauchelet. Analysis of a diffusive effective mass model for nanowires. Kinetic & Related Models, 2011, 4 (4) : 1121-1142. doi: 10.3934/krm.2011.4.1121
##### References:
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##### References:
 [1] N. W. Ashcroft and N. D. Mermin, "Solid State Physics,'', Saunders College Publishing, (1976).   Google Scholar [2] J.-P. Aubin, Un théor\eme de compacité,, C. R. Acad. Sci. Paris, 256 (1963), 5042.   Google Scholar [3] N. Ben Abdallah and L. Barletti, Quantum transport in crystals : Effective-mass theorem and k.p Hamiltonians,, Comm. Math. Phys., 307 (2011), 567.   Google Scholar [4] N. Ben Abdallah and P. Degond, On a hierarchy of macroscopic models for semiconductors, J. Math. Phys., 37 (1996), 3306.  doi: 10.1063/1.531567.  Google Scholar [5] N. Ben Abdallah, C. Jourdana and P. Pietra, An effective mass model for the simulation of ultra-scaled confined devices,, preprint, ().   Google Scholar [6] N. Ben Abdallah and F. Méhats, On a Vlasov-Schrödinger-Poisson model,, Comm. Partial Differential Equations, 29 (2004), 173.   Google Scholar [7] N. Ben Abdallah and F. Méhats, Semiclassical analysis of the Schrödinger equation with a partially confining potential,, J. Math. Pures Appl. (9), 84 (2005), 580.  doi: 10.1016/j.matpur.2004.10.004.  Google Scholar [8] N. Ben Abdallah, F. Méhats and N. Vauchelet, Diffusive transport of partially quantized particles: Existence, uniqueness and long-time behaviour,, Proc. Edinb. Math. Soc. (2), 49 (2006), 513.  doi: 10.1017/S0013091504000987.  Google Scholar [9] N. Ben Abdallah and M. L. Tayeb, Diffusion approximation for the one dimensional Boltzmann-Poisson system,, Discrete Contin. Dyn. Syst. Ser. B, 4 (2004), 1129.  doi: 10.3934/dcdsb.2004.4.1129.  Google Scholar [10] C. Heitzinger and C. Ringhofer, A transport equation for confined structures derived from the Boltzmann equation,, Comm. Math. Sci., 9 (2011), 829.   Google Scholar [11] A. Henrot, "Extremum Problems for Eigenvalues of Elliptic Operators,'', Frontiers in Mathematics, (2006).   Google Scholar [12] A. Jüngel, "Transport Equations for Semiconductors,'', Lecture Notes in Physics, 773 (2009).   Google Scholar [13] J.-L. Lions, "Équations Différentielles Opérationnelles et Problèmes aux Limites,'', Die Grundlehren der mathematischen Wissenschaften, (1961).   Google Scholar [14] P. A. Markowich, C. A. Ringhofer and C. Schmeiser, "Semiconductor Equations,'', Springer-Verlag, (1990).  doi: 10.1007/978-3-7091-6961-2.  Google Scholar [15] N. Masmoudi and M. L. Tayeb, Diffusion limit of a semiconductor Boltzmann-Poisson system,, SIAM J. Math. Anal., 38 (2007), 1788.  doi: 10.1137/050630763.  Google Scholar [16] M. S. Mock, "Analysis of Mathematical Models of Semiconductor Devices,'', Advances in Numerical Computation Series, 3 (1983).   Google Scholar [17] P. Pietra and N. Vauchelet, Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET,, J. Comp. Elec., 7 (2008), 52.  doi: 10.1007/s10825-008-0253-z.  Google Scholar [18] F. Poupaud, Diffusion approximation of the linear semiconductor Boltzmann equation: Analysis of boundary layers,, Asymptotic Anal., 4 (1991), 293.   Google Scholar [19] N. Vauchelet, Diffusive limit of a two dimensional kinetic system of partially quantized particles,, J. Stat. Phys., 139 (2010), 882.  doi: 10.1007/s10955-010-9970-3.  Google Scholar [20] N. Vauchelet, Diffusive transport of partially quantized particles: $L\log L$ solutions,, Math. Models Methods Appl. Sci., 18 (2008), 489.  doi: 10.1142/S0218202508002759.  Google Scholar [21] T. Wenckebach, "Essential of Semiconductor Physics,'', Wiley, (1999).   Google Scholar
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